Ceramic Nozzle 4H SiC Polished Plate for TCB Packaging

4H SiC ceramic nozzles are precision-machined components for TCB packaging, designed to pick up and hold semiconductor chips or dies during alignment and bonding onto substrates. HMT provides 4H-SiC polished plate material and customized machining for nozzle structures, supporting TCB applications that require stable vacuum holding, thermal transfer and dimensional precision. Used in TCB packaging to pick up and hold semiconductor chips or dies for alignment, placement and bonding onto substrates.

What Is a 4H SiC Ceramic Nozzle?

A 4H SiC ceramic nozzle is a precision silicon carbide component used at the bond head of thermal compression bonding equipment. In a typical TCB process, the nozzle directly contacts the die and uses vacuum to pick up and hold the semiconductor die before placing it onto a substrate; published TCB designs also describe vacuum holes and vacuum channels integrated into the nozzle surface.

The nozzle can be manufactured from 4H-SiC polished plate and subsequently processed into the required external geometry, vacuum holes, channels or other functional features. The final structure can contain 1 or more vacuum paths depending on the die geometry and equipment design.

Why Use 4H-SiC for TCB Nozzles?

4H-SiC provides a combination of mechanical rigidity and thermal properties that can be valuable in precision bonding equipment. Published physical-property data report thermal conductivity in the range of approximately 350–490 W/m·K for 4H-SiC depending on crystal quality, measurement direction and material condition.

Its coefficient of thermal expansion is also relatively low, with published values around 2.3–4.3 × 10⁻⁶/K depending on measurement conditions and crystallographic direction. These properties can help reduce thermal deformation and support dimensional stability during repeated heating and cooling cycles in semiconductor packaging equipment.

4H SiC Polished Plate as the Starting Material

HMT can supply 4H SiC polished plate as the starting material for precision-machined ceramic nozzles. A polished starting surface can reduce the amount of downstream surface preparation required before precision machining, depending on the customer's final nozzle design. The starting plate can be specified according to parameters such as thickness, diameter or surface roughness, flatness. 

For customers requiring a controlled polished starting surface, HMT also supplies 4H SiC Polished Plate for downstream precision machining.

Surface Finish for TCB Die Contact

The nozzle's contact surface is an important interface between the SiC nozzle and semiconductor die. Surface roughness, flatness and dimensional accuracy can influence contact conditions, vacuum sealing and the consistency of die handling.

HMT can provide the SiC starting plate with a specified polishing condition and evaluate additional precision finishing requirements. The final surface specification should be established according to the customer's die material, vacuum design and TCB process parameters rather than applying a generic roughness value.

Recommended Specification Structure

TCB Packaging Application

Ceramic nozzles made from 4H-SiC polished plate can be used in TCB packaging to pick up and hold chips or dies for alignment, placement and bonding onto substrates. This application is particularly relevant to semiconductor packaging processes where the nozzle must repeatedly handle small components while maintaining controlled positioning.

Public TCB documentation describes the nozzle as being physically placed on a semiconductor die, applying vacuum to pick up and hold the die, and subsequently positioning the die onto a substrate. The same disclosed process can be repeated for 2 or more dies in a multiple-die package.

why Choose HMT 4H SiC Ceramic Nozzles?

HMT combines 4H-SiC polished plate supply with downstream precision machining to support customers developing customized TCB nozzles. This approach allows the starting material, surface condition and machining allowance to be considered together instead of treating the SiC plate and final nozzle as completely separate processes.