SiC Substrate Producer 4H 100mm Silicon Carbide Wafer 150dia

Silicon carbide (SiC) serves as the substrate for semiconductor chips. HMT supplies 4H SiC Substrates with 100mm 150mm 200mm Conductive type and Semi-insulating type. Customer can select P grade R grade or D grade for their projects. The substrate refers to the foundational material at the bottom layer of a chip, analogous to the foundation of a building. When SiC is used as the substrate material, the cost of the substrate increases significantly.

Substrate materials have now evolved to the  third generation , but the relationship between generations is not one of replacement. Instead, each generation is applied in different fields due to their distinct properties.  

First-generation substrates are primarily silicon-based For example, CPUs and GPUs use silicon substrates, and currently, 90% of semiconductor substrates are made of silicon (used in large-scale integrated circuits ).  

Second-generation substrates are represented by indium phosphide (InP) and gallium arsenide (GaAs) . Due to their high-speed, high-frequency optoelectronic properties, they are mainly used in optical modules, LEDs, and optoelectronic devices  (e.g., **optical communication, optical display, and optical storage ).  

Third-generation substrates include silicon carbide (SiC) and  gallium nitride (GaN) . Thanks to their high-temperature and high-voltage resistance, they are primarily used in  new energy vehicles, photovoltaics, and other fields  (for  high-frequency, high-power electronic devices ).  

Coexistence and Synergy of the Three Generations of Semiconductors  

Complementarity, Not Replacement :  

 Silicon remains the absolute mainstream for  logic chips and consumer electronics (accounting for 95% of the global semiconductor market ). 

GaAs and InP dominate  high-frequency and optoelectronic niche markets . 

SiC/GaN play an irreplaceable role in new energy and industrial applications .  

Examples of Technological Integration :  

GaN-on-Si: Combining gallium nitride with low-cost silicon substrates for  fast charging and RF applications   

iC-IGBT hybrid modules : Integrating silicon carbide with IGBTs to improve power grid conversion efficiency .  

Future Trends:  

Heterogeneous integration: Combining different materials (e.g.,Si + GaN) on a single chip to balance performance and cost.  

Ultra-wide bandgap materials: Emerging materials like gallium oxide (Ga₂O₃) and diamond may unlock new applications in ultra-high voltage (beyond 20kV) and quantum computing.