6-Inch Un-doped HPSI SiC Wafers for GaN RF & Power Electronics

Product Overview

HMT is a professional manufacturer of silicon carbide (SiC) wafers, offering high-quality 6-inch (150mm) Un-doped High-Purity Semi-Insulating (HPSI) SiC substrates. With resistivity exceeding 10^8 Ω·cm, our HPSI wafers meet the stringent requirements of advanced RF and power applications.

Key Specifications

• Diameter: 150mm (6 inch)

• Type: Un-doped HPSI (High-Purity Semi-Insulating)

• Resistivity: >10^8 Ω·cm

• Crystal Structure: 4H-SiC

• Surface Finish: Double-side polished (DSP)

• Surface Roughness: ≤0.2nm
  

• Thickness: 500 μm ± 25 μm

• TTV (Total Thickness Variation): ≤ 8 μm

• Bow/Warp: ≤ 30 μm
  
  

Primary Applications

1. GaN RF Devices (5G & Radar)

Our HPSI SiC substrates are the ideal platform for growing high-quality GaN epitaxial layers. The resulting GaN-on-SiC epi wafers are processed into HEMTs (High Electron Mobility Transistors) for 5G base stations, military radar, and satellite communication systems.

2. Power Electronics (EVs & Industrial)

For conductive (N-type) SiC wafers, applications include Schottky diodes, MOSFETs, and IGBTs used in electric vehicles (EVs), rail transportation, and high-power transmission systems.

Why Choose HMT?

• Manufacturer Direct: Competitive pricing with full quality control

• Customization: Available in various diameters (2", 4'',6", 8") and specifications

• Global Shipping: Reliable logistics to North America, Europe, and Asia

Related Products

• 4" N-type SiC Substrates

• 8" SiC Wafers

• SiC Epitaxial Wafers