8 inch Conductive 4H-N type SiC Wafer Supplier

SiC Wafers are revolutionizing semiconductor manufacturing with their superior thermal conductivity, high voltage tolerance, and energy efficiency. At HMT, we specialize in producing advanced 2-inch (50mm), 4-inch (100mm), 6-inch (150mm), and 8-inch (200mm) SiC wafers, driving the industry shift toward large-diameter substrates for enhanced productivity and cost efficiency.

SiC Wafer Types: Semi-Insulating vs. Conductive

1️⃣ Semi-Insulating SiC Wafers

• Resistivity: >1e5 Ω·cm via ultra-high purity crystal growth

• Applications:

• GaN RF devices for 5G/6G base stations (3-6 GHz bands)

• Military-grade radar systems (X-band to Ka-band)

• Satellite communication power amplifiers

2️⃣ Conductive SiC Wafers

• Doping: Nitrogen-doped for <0.02 Ω·cm resistivity

• Applications:

• EV power modules (900V+ SiC MOSFETs)

• Industrial motor drives

• Solar inverter systems

Gallium nitride RF devices prepared with semi-insulated SiC substrate are mainly power amplifiers for communication base stations and radar applications. Gallium nitride RF devices are the most ideal microwave RF devices so far, so it has become the core microwave RF devices in 4G/5G mobile communication systems, a new generation of active phased array radar and other systems.

8 inch SiC Substrae wafer and 8 inch SiC Boule Pictures