4H-P Type SiC Wafer Manufacturer

As a global leader in SiC wafer solutions, HMT delivers premium Aluminum-doped P-Type 4H-SiC Wafers engineered for breakthrough R&D and high-yield production. Our wafers feature industry-leading specifications:

✅ Ultra-Low Defect Density: MPD <0.1 cm⁻²
✅ Precision Resistivity: 0.06–0.11 Ω∙cm
✅ Uniform Thickness: 350±25 μm
✅ Full Scalability: 2", 4", and 6" diameters
✅ Multiple Grades: Optimized for research to volume manufacturing

Ideal for power devices, quantum technology, and next-gen semiconductors. Request your tailored wafer solution today to elevate device performance and yield.