4H-N Conductive SiC Wafers | 4-Inch N-Type Substrates for Power Electronics

Product Overview

HMT Semiconductors is a professional manufacturer of 4 inch (100mm) 4H-N type conductive silicon carbide (SiC) wafers. As a critical raw material for third-generation semiconductors, our N-type SiC substrates are precision-engineered for high-power and high-frequency applications. Available in multiple performance grades (P-grade and D-grade) to meet diverse device requirements.

Key Electrical & Physical Specifications

Key Advantages of 4H-N SiC Substrates

1. High Breakdown Voltage

Silicon carbide has a breakdown electric field strength 10 times that of silicon. This enables SiC-based devices to significantly improve voltage capacity, operating frequency, and current density while dramatically reducing switching losses.

2. High-Temperature Operation

With a bandgap nearly 3 times that of silicon, SiC devices maintain reliability at extreme temperatures. While silicon devices are limited to ~300°C, SiC devices can operate at temperatures exceeding 600°C without intrinsic carrier excitation failure.

3. High-Frequency Performance

The saturated electron drift rate of SiC is twice that of silicon, enabling higher operating frequencies and power densities—critical for next-generation power conversion systems.

Primary Applications

• Electric Vehicles (EVs) – On-board chargers, traction inverters, DC-DC converters

• Charging Stations – High-power fast charging infrastructure

• Renewable Energy – Photovoltaic inverters, wind power converters

• Energy Storage Systems – Grid-tied storage power conditioning

• Rail Transit & Smart Grid – High-voltage traction and transmission

• Industrial Power Supplies & Drives – Motor drives, UPS systems

Why Choose HMT?

• Grade Options: P-grade and D-grade available for different cost-performance requirements

• Manufacturer Direct: Competitive pricing with full in-house quality control

• Customization: Off-axis orientation, thickness, and surface finish can be tailored

• Quality Assurance: Low defect density ensures reliable epitaxial growth

• Global Supply: Reliable shipping to North America, Europe, and Asia

Related Products

• 6" N-Type SiC Substrates

• Semi-Insulating SiC Wafers

• SiC Epitaxial Wafers