N Type SiC Substrate Wafer Manufacturer P Type SiC Epitaxy Wafers

As a reliable and leading SiC Wafer Manufacturer, we supply high-quality P-Type Silicon Carbide (SiC) Epitaxy Wafers are grown on N-Type SiC substrate wafers, 4inch 6inch and 8inch are all available in HMT company. We use Production Grade SiC Substrate wafer with ultralow MPD parameters. Meanwhile, we support customized service like epi layer thickness, concerntration etc. We delivering exceptional electrical properties, thermal conductivity, and reliability for demanding applications.


Key Features:

✔ Low Defect Density – High-purity epitaxial layers for enhanced device performance
✔ Optimized Doping Control – Precise P-Type doping for efficient power device fabrication
✔ High Thermal & Chemical Stability – Ideal for high-power, high-frequency applications
✔ Customizable Thickness & Resistivity – Tailored to meet specific semiconductor requirements

Applications:

• Power electronics (MOSFETs, Schottky diodes)

• Electric vehicles (EV inverters, chargers)

• Renewable energy systems

• Aerospace & defense electronics
  
  

As a trusted SiC wafer manufacturer, we ensure superior crystal quality and consistency for next-generation semiconductor devices.

Contact us today for specifications and bulk orders!